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Spin-Orbit Coupling at the Level of a Single Electron.
Maisi, V F; Hofmann, A; Röösli, M; Basset, J; Reichl, C; Wegscheider, W; Ihn, T; Ensslin, K.
Afiliação
  • Maisi VF; Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
  • Hofmann A; Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
  • Röösli M; Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
  • Basset J; Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
  • Reichl C; Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
  • Wegscheider W; Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
  • Ihn T; Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
  • Ensslin K; Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
Phys Rev Lett ; 116(13): 136803, 2016 Apr 01.
Article em En | MEDLINE | ID: mdl-27081997
We utilize electron counting techniques to distinguish a spin-conserving fast tunneling process and a slower process involving spin flips in AlGaAs/GaAs-based double quantum dots. By studying the dependence of the rates on the interdot tunnel coupling of the two dots, we find that as many as 4% of the tunneling events occur with a spin flip related to spin-orbit coupling in GaAs. Our measurement has a fidelity of 99% in terms of resolving whether a tunneling event occurred with a spin flip or not.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article