Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1-xMnxTe.

Kriener, M; Nakajima, T; Kaneko, Y; Kikkawa, A; Yu, X Z; Endo, N; Kato, K; Takata, M; Arima, T; Tokura, Y; Taguchi, Y.

Afiliação

Kriener M; RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.
Nakajima T; RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.
Kaneko Y; RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.
Kikkawa A; RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.
Yu XZ; RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.
Endo N; EM Business Unit, JEOL Ltd., Akishima, 196-8558, Japan.
Kato K; RIKEN SPring-8 Center, Hyogo 679-5148, Japan.
Takata M; RIKEN SPring-8 Center, Hyogo 679-5148, Japan.
Arima T; RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.
Tokura Y; Department of Advanced Materials Science, University of Tokyo, Kashiwa 277-8561, Japan.
Taguchi Y; RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.

Sci Rep ; 6: 25748, 2016 05 10.

Article em En | MEDLINE | ID: mdl-27160657

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article