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Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors.
Peng, Kun; Parkinson, Patrick; Boland, Jessica L; Gao, Qian; Wenas, Yesaya C; Davies, Christopher L; Li, Ziyuan; Fu, Lan; Johnston, Michael B; Tan, Hark H; Jagadish, Chennupati.
Afiliação
  • Peng K; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia.
  • Parkinson P; School of Physics and Astronomy and the Photon Science Institute, University of Manchester , M13 9PL, Manchester, United Kingdom.
  • Boland JL; Department of Physics, University of Oxford , Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, United Kingdom.
  • Gao Q; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia.
  • Wenas YC; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia.
  • Davies CL; Department of Physics, University of Oxford , Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, United Kingdom.
  • Li Z; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia.
  • Fu L; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia.
  • Johnston MB; Department of Physics, University of Oxford , Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, United Kingdom.
  • Tan HH; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia.
  • Jagadish C; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia.
Nano Lett ; 16(8): 4925-31, 2016 08 10.
Article em En | MEDLINE | ID: mdl-27413813
Terahertz time-domain spectroscopy (THz-TDS) has emerged as a powerful tool for materials characterization and imaging. A trend toward size reduction, higher component integration, and performance improvement for advanced THz-TDS systems is of increasing interest. The use of single semiconducting nanowires for terahertz (THz) detection is a nascent field that has great potential to realize future highly integrated THz systems. In order to develop such components, optimized material optoelectronic properties and careful device design are necessary. Here, we present antenna-optimized photoconductive detectors based on single InP nanowires with superior properties of high carrier mobility (∼1260 cm(2) V(-1) s(-1)) and low dark current (∼10 pA), which exhibit excellent sensitivity and broadband performance. We demonstrate that these nanowire THz detectors can provide high quality time-domain spectra for materials characterization in a THz-TDS system, a critical step toward future application in advanced THz-TDS system with high spectral and spatial resolution.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article