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Normal Incident Long Wave Infrared Quantum Dash Quantum Cascade Photodetector.
Wang, Feng-Jiao; Ren, Fei; Liu, Shu-Man; Zhuo, Ning; Zhai, Shen-Qiang; Liu, Jun-Qi; Liu, Feng-Qi; Wang, Zhan-Guo.
Afiliação
  • Wang FJ; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China.
  • Ren F; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China.
  • Liu SM; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China. liusm@
  • Zhuo N; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China.
  • Zhai SQ; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China.
  • Liu JQ; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China.
  • Liu FQ; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China. fqliu@
  • Wang ZG; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China.
Nanoscale Res Lett ; 11(1): 392, 2016 Dec.
Article em En | MEDLINE | ID: mdl-27613069
ABSTRACT
We demonstrate a quantum dash quantum cascade photodetector (QDash-QCD) by incorporating self-assembled InAs quantum dashes into the active region of a long wave infrared QCD. Sensitive photoresponse to normal incident light at 10 µm was observed, which is attributed to the intersubband (ISB) transitions in the quantum well/quantum dash (QW/QDash) hybrid absorption region and the following transfer of excited electrons on the extraction stair-like quantum levels separated by LO-phonon energy. The high density InAs quantum dashes were formed in the Stranski-Krastanow mode and stair-like levels were formed by a lattice matched InGaAs/InAlAs superlattice. A stable responsivity from 5 mA/W at 77 K to 3 mA/W at as high as 190 K was observed, which makes the QDash-QCD promising in high temperature operation.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article