Recent progress in GeSi electro-absorption modulators.
Sci Technol Adv Mater
; 15(1): 014601, 2014 Feb.
Article
em En
| MEDLINE
| ID: mdl-27877639
ABSTRACT
Electro-absorption from GeSi heterostructures is receiving growing attention as a high performance optical modulator for short distance optical interconnects. Ge incorporation with Si allows strong modulation mechanism using the Franz-Keldysh effect and the quantum-confined Stark effect from bulk and quantum well structures at telecommunication wavelengths. In this review, we discuss the current state of knowledge and the on-going challenges concerning the development of high performance GeSi electro-absorption modulators. We also provide feasible future prospects concerning this research topic.
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MEDLINE
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En
Ano de publicação:
2014
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Article