Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe<sub>2</sub>.

Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe₂.

Zhang, Enze; Chen, Rui; Huang, Ce; Yu, Jihai; Zhang, Kaitai; Wang, Weiyi; Liu, Shanshan; Ling, Jiwei; Wan, Xiangang; Lu, Hai-Zhou; Xiu, Faxian.

Afiliação

Zhang E; State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.
Chen R; Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
Huang C; State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.
Yu J; Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
Zhang K; State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.
Wang W; Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
Liu S; Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
Ling J; National Laboratory of Solid State Microstructures, School of Physics, Nanjing University , Nanjing 210093, China.
Wan X; State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.
Lu HZ; State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.
Xiu F; Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.