Property database for single-element doping in ZnO obtained by automated first-principles calculations.

Yim, Kanghoon; Lee, Joohee; Lee, Dongheon; Lee, Miso; Cho, Eunae; Lee, Hyo Sug; Nahm, Ho-Hyun; Han, Seungwu.

Afiliação

Yim K; Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea.
Lee J; Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea.
Lee D; Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea.
Lee M; Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea.
Cho E; Platform Technology Lab., SAIT, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeong Tong-gu, Suwon-si, Gyeonggi-do 16687, Korea.
Lee HS; Platform Technology Lab., SAIT, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeong Tong-gu, Suwon-si, Gyeonggi-do 16687, Korea.
Nahm HH; Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747, Korea.
Han S; Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.

Sci Rep ; 7: 40907, 2017 01 23.

Article em En | MEDLINE | ID: mdl-28112188

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article