Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition.

Cheng, Po-Hsien; Wang, Chun-Yuan; Chang, Teng-Jan; Shen, Tsung-Han; Cai, Yu-Syuan; Chen, Miin-Jang.

Afiliação

Cheng PH; Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan.
Wang CY; Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan.
Chang TJ; Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan.
Shen TH; Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan.
Cai YS; Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan.
Chen MJ; Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan. mjchen@ntu.edu.tw.

Sci Rep ; 7(1): 875, 2017 04 13.

Article em En | MEDLINE | ID: mdl-28408744

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article