Semipolar III-nitride laser diodes with zinc oxide cladding.
Opt Express
; 25(15): 16922-16930, 2017 Jul 24.
Article
em En
| MEDLINE
| ID: mdl-28789192
ABSTRACT
Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.
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MEDLINE
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En
Ano de publicação:
2017
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Article