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UV-Cured Inkjet-Printed Silver Gate Electrode with Low Electrical Resistivity.
Ning, Honglong; Zhou, Yicong; Fang, Zhiqiang; Yao, Rihui; Tao, Ruiqiang; Chen, Jianqiu; Cai, Wei; Zhu, Zhennan; Yang, Caigui; Wei, Jinglin; Wang, Lei; Peng, Junbiao.
Afiliação
  • Ning H; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China.
  • Zhou Y; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China.
  • Fang Z; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China.
  • Yao R; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China. yaorihui@scut.edu.cn.
  • Tao R; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China.
  • Chen J; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China.
  • Cai W; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China.
  • Zhu Z; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China.
  • Yang C; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China.
  • Wei J; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China.
  • Wang L; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China.
  • Peng J; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China. psjbpeng@scut.edu.cn.
Nanoscale Res Lett ; 12(1): 546, 2017 Sep 25.
Article em En | MEDLINE | ID: mdl-28948539
ABSTRACT
Inkjet-printed silver gate electrode with low electrical resistivity was fabricated by UV curing method. By adjusting the UV curing time and the distance between the samples and UV lamp, the effects of UV curing conditions on the electrical resistivity of the silver films were studied, and the lowest electrical resistivity of 6.69 × 10-8 Ω·m was obtained. Besides, the UV-cured silver films have good adhesion to the glass substrates, with adhesion strength of 4B (ASTM international standard). Our work offered an easy and low temperature approach to fabricate inkjet-printed silver electrodes with low electrical resistivity.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article
Texto completo
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article