Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths.

Li, Changfu; Ji, Ziwu; Li, Jianfei; Xu, Mingsheng; Xiao, Hongdi; Xu, Xiangang.

Afiliação

Li C; School of Microelectronics, Shandong University, Jinan, 250100, China.
Ji Z; School of Physics and Electronic Engineering, Taishan University, Taian, 271000, China.
Li J; School of Microelectronics, Shandong University, Jinan, 250100, China. jiziwu@sdu.edu.cn.
Xu M; School of Microelectronics, Shandong University, Jinan, 250100, China.
Xiao H; School of Microelectronics, Shandong University, Jinan, 250100, China.
Xu X; School of Microelectronics, Shandong University, Jinan, 250100, China.

Sci Rep ; 7(1): 15301, 2017 11 10.

Article em En | MEDLINE | ID: mdl-29127337

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article