Stateful characterization of resistive switching TiO<sub>2</sub> with electron beam induced currents.

Stateful characterization of resistive switching TiO₂ with electron beam induced currents.

Hoskins, Brian D; Adam, Gina C; Strelcov, Evgheni; Zhitenev, Nikolai; Kolmakov, Andrei; Strukov, Dmitri B; McClelland, Jabez J.

Afiliação

Hoskins BD; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA. brian.hoskins@nist.gov.
Adam GC; Materials Department, University of California Santa Barbara, Santa Barbara, CA, 93106, USA. brian.hoskins@nist.gov.
Strelcov E; Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, CA, 93106, USA.
Zhitenev N; Institute for Research and Development in Microtechnologies, 077190, Bucharest, Romania.
Kolmakov A; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
Strukov DB; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, 20742, USA.
McClelland JJ; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.

Nat Commun ; 8(1): 1972, 2017 12 07.

Article em En | MEDLINE | ID: mdl-29215006

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article