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Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments.
Chen, Kai-Huang; Tsai, Tsung-Ming; Cheng, Chien-Min; Huang, Shou-Jen; Chang, Kuan-Chang; Liang, Shu-Ping; Young, Tai-Fa.
Afiliação
  • Chen KH; Department of Electrical Engineering and Computer Science, Tung Fang Design University, Kaohsiung 829, Taiwan. d9131802@gmail.com.
  • Tsai TM; Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 829, Taiwan. patrick@mail.tf.edu.tw.
  • Cheng CM; Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 710, Taiwan. ccmin523@gmail.com.
  • Huang SJ; Department of Electrical Engineering and Computer Science, Tung Fang Design University, Kaohsiung 829, Taiwan. tmtsai@faculty.nsysu.edu.tw.
  • Chang KC; Department of Tourism and Leisure Management, Tung Fang Design University, Kaohsiung 829, Taiwan. tmtsai@faculty.nsysu.edu.tw.
  • Liang SP; Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 829, Taiwan. d9131802@mail.tf.edu.tw.
  • Young TF; Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung 829, Taiwan. u8613319@yahoo.com.tw.
Materials (Basel) ; 11(1)2017 Dec 28.
Article em En | MEDLINE | ID: mdl-29283368
ABSTRACT
In this study, the hopping conduction distance and bipolar switching properties of the GdSiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage (I-V) characteristics of gadolinium oxide RRAM devices was transferred and fitted. Finally, the transmission electrons' switching behavior between the TiN bottom electrode and Pt top electrode in the initial metallic filament forming process of the gadolinium oxide thin film RRAM devices for low resistance state (LRS)/high resistance state (HRS) was described and explained in a simulated physical diagram model.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article