Charge-Transfer-Induced p-Type Channel in MoS<sub>2</sub> Flake Field Effect Transistors.

Charge-Transfer-Induced p-Type Channel in MoS₂ Flake Field Effect Transistors.

Min, Sung-Wook; Yoon, Minho; Yang, Sung Jin; Ko, Kyeong Rok; Im, Seongil.

Afiliação

Min SW; Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
Yoon M; Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
Yang SJ; Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
Ko KR; Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
Im S; Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.

ACS Appl Mater Interfaces ; 10(4): 4206-4212, 2018 Jan 31.

Article em En | MEDLINE | ID: mdl-29318882