Tunable &#915;-K Valley Populations in Hole-Doped Trilayer WSe_{2}.

Tunable Γ-K Valley Populations in Hole-Doped Trilayer WSe_{2}.

Movva, Hema C P; Lovorn, Timothy; Fallahazad, Babak; Larentis, Stefano; Kim, Kyounghwan; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K; MacDonald, Allan H; Tutuc, Emanuel.

Afiliação

Movva HCP; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA.
Lovorn T; Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA.
Fallahazad B; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA.
Larentis S; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA.
Kim K; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA.
Taniguchi T; National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan.
Watanabe K; National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan.
Banerjee SK; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA.
MacDonald AH; Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA.
Tutuc E; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA.

Phys Rev Lett ; 120(10): 107703, 2018 Mar 09.

Article em En | MEDLINE | ID: mdl-29570322

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article