Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant.
Micromachines (Basel)
; 9(12)2018 Nov 26.
Article
em En
| MEDLINE
| ID: mdl-30486267
ABSTRACT
Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)-ex-situ AlN NL and in-situ GaN NL-were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.
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MEDLINE
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En
Ano de publicação:
2018
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Article