Investigation of Energy Band at Atomic-Layer-Deposited ZnO/ß-Ga<sub>2</sub>O<sub>3</sub> ([Formula: see text]) Heterojunctions.

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/ß-Ga₂O₃ ([Formula: see text]) Heterojunctions.

Sun, Shun-Ming; Liu, Wen-Jun; Xiao, Yi-Fan; Huan, Ya-Wei; Liu, Hao; Ding, Shi-Jin; Zhang, David Wei.

Afiliação

Sun SM; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Liu WJ; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China. wjliu@fudan.edu.cn.
Xiao YF; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Huan YW; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Liu H; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Ding SJ; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China. sjding@fudan.edu.cn.
Zhang DW; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.

Nanoscale Res Lett ; 13(1): 412, 2018 Dec 24.

Article em En | MEDLINE | ID: mdl-30584649