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SnSe2 Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity.
Xu, Hong; Xing, Jie; Huang, Yuan; Ge, Chen; Lu, Jinghao; Han, Xu; Du, Jianyu; Hao, Huiying; Dong, Jingjing; Liu, Hao.
Afiliação
  • Xu H; School of Sciences, China University of Geosciences, Beijing, 100083, China.
  • Xing J; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Huang Y; School of Sciences, China University of Geosciences, Beijing, 100083, China. xingjie@cugb.edu.cn.
  • Ge C; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China. yhuang01@iphy.ac.cn.
  • Lu J; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Han X; School of Sciences, China University of Geosciences, Beijing, 100083, China.
  • Du J; School of Sciences, China University of Geosciences, Beijing, 100083, China.
  • Hao H; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Dong J; School of Sciences, China University of Geosciences, Beijing, 100083, China.
  • Liu H; School of Sciences, China University of Geosciences, Beijing, 100083, China.
Nanoscale Res Lett ; 14(1): 17, 2019 Jan 09.
Article em En | MEDLINE | ID: mdl-30627821

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article