P-N Junction Diode Using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices.

Kim, Dae-Kyoung; Hong, Seok-Bo; Jeong, Kwangsik; Lee, Changmin; Kim, Hyoungsub; Cho, Mann-Ho.

Afiliação

Kim DK; Department of Physics , Yonsei University , Seoul 03722 , Republic of Korea.
Hong SB; Department of Physics , Yonsei University , Seoul 03722 , Republic of Korea.
Jeong K; Department of Physics , Yonsei University , Seoul 03722 , Republic of Korea.
Lee C; School of Advanced Materials Science and Engineering , Sungkyunkwan University , Suwon 16419 , Republic of Korea.
Kim H; School of Advanced Materials Science and Engineering , Sungkyunkwan University , Suwon 16419 , Republic of Korea.
Cho MH; Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) , Sungkyunkwan University , Suwon 16419 , Republic of Korea.

ACS Nano ; 13(2): 1683-1693, 2019 Feb 26.

Article em En | MEDLINE | ID: mdl-30753059