Silicon-on-insulator free-carrier injection modulators for the mid-infrared.
Opt Lett
; 44(4): 915-918, 2019 Feb 15.
Article
em En
| MEDLINE
| ID: mdl-30768019
ABSTRACT
Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 µm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach-Zehnder interferometer, achieving a VπLπ of 0.052 V·mm and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s.
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MEDLINE
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En
Ano de publicação:
2019
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Article