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Giant piezoelectricity of Sm-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals.
Li, Fei; Cabral, Matthew J; Xu, Bin; Cheng, Zhenxiang; Dickey, Elizabeth C; LeBeau, James M; Wang, Jianli; Luo, Jun; Taylor, Samuel; Hackenberger, Wesley; Bellaiche, Laurent; Xu, Zhuo; Chen, Long-Qing; Shrout, Thomas R; Zhang, Shujun.
Afiliação
  • Li F; Electronic Materials Research Lab, Key Lab of Education Ministry/International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China. ful5@xjtu.edu.cn shujun@uow.edu.
  • Cabral MJ; Materials Research Institute, Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA.
  • Xu B; Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA.
  • Cheng Z; School of Physical Science and Technology, Soochow University, Suzhou 215006, China.
  • Dickey EC; Institute for Nanoscience and Engineering and Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA.
  • LeBeau JM; ISEM, Australian Institute for Innovative Materials, University of Wollongong, Wollongong, NSW 2500, Australia.
  • Wang J; Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA.
  • Luo J; Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA.
  • Taylor S; ISEM, Australian Institute for Innovative Materials, University of Wollongong, Wollongong, NSW 2500, Australia.
  • Hackenberger W; TRS Technologies Inc., 2820 East College Avenue, State College, PA 16801, USA.
  • Bellaiche L; TRS Technologies Inc., 2820 East College Avenue, State College, PA 16801, USA.
  • Xu Z; TRS Technologies Inc., 2820 East College Avenue, State College, PA 16801, USA.
  • Chen LQ; Institute for Nanoscience and Engineering and Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA.
  • Shrout TR; Electronic Materials Research Lab, Key Lab of Education Ministry/International Center for Dielectric Research, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
  • Zhang S; Materials Research Institute, Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA.
Science ; 364(6437): 264-268, 2019 04 19.
Article em En | MEDLINE | ID: mdl-31000659
High-performance piezoelectrics benefit transducers and sensors in a variety of electromechanical applications. The materials with the highest piezoelectric charge coefficients (d 33) are relaxor-PbTiO3 crystals, which were discovered two decades ago. We successfully grew Sm-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 (Sm-PMN-PT) single crystals with even higher d 33 values ranging from 3400 to 4100 picocoulombs per newton, with variation below 20% over the as-grown crystal boule, exhibiting good property uniformity. We characterized the Sm-PMN-PT on the atomic scale with scanning transmission electron microscopy and made first-principles calculations to determine that the giant piezoelectric properties arise from the enhanced local structural heterogeneity introduced by Sm3+ dopants. Rare-earth doping is thus identified as a general strategy for introducing local structural heterogeneity in order to enhance the piezoelectricity of relaxor ferroelectric crystals.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article
Texto completo
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article