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Deposition of Silicon-Based Stacked Layers for Flexible Encapsulation of Organic Light Emitting Diodes.
Hsu, Chia-Hsun; Lin, Yang-Shih; Wu, Hsin-Yu; Zhang, Xiao-Ying; Wu, Wan-Yu; Lien, Shui-Yang; Wuu, Dong-Sing; Jiang, Yeu-Long.
Afiliação
  • Hsu CH; School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
  • Lin YS; Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan.
  • Wu HY; Graduate Institute of Optoelectronic Engineering and Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan.
  • Zhang XY; School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
  • Wu WY; Department of Materials Science and Engineering, Da-Yeh University, Chunghwa 51591, Taiwan.
  • Lien SY; School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China. sylien@xmut.edu.cn.
  • Wuu DS; Department of Materials Science and Engineering, Da-Yeh University, Chunghwa 51591, Taiwan. sylien@xmut.edu.cn.
  • Jiang YL; Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan.
Nanomaterials (Basel) ; 9(7)2019 Jul 23.
Article em En | MEDLINE | ID: mdl-31340501
In this study, inorganic silicon oxide (SiOx)/organic silicon (SiCxHy) stacked layers were deposited by a radio frequency inductively coupled plasma chemical vapor deposition system as a gas diffusion barrier for organic light-emitting diodes (OLEDs). The effects of thicknesses of SiOx and SiCxHy layers on the water vapor transmission rate (WVTR) and residual stress were investigated to evaluate the encapsulation capability. The experimental results showed that the lowest WVTR and residual stress were obtained when the thicknesses of SiOx and SiCxHy were 300 and 30 nm, respectively. Finally, different numbers of stacked pairs of SiOx/SiCxHy were applied to OLED encapsulation. The OLED encapsulated with the six-pair SiOx/SiCxHy exhibited a low turn-on voltage and low series resistance, and device lifetime increased from 7 h to more than 2000 h.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article