Band Filling and Cross Quantum Capacitance in Ion-Gated Semiconducting Transition Metal Dichalcogenide Monolayers.

Zhang, Haijing; Berthod, Christophe; Berger, Helmuth; Giamarchi, Thierry; Morpurgo, Alberto F.

Afiliação

Zhang H; DQMP , University of Geneva , 24 Quai Ernest-Ansermet , CH-1211 Geneva , Switzerland.
Berthod C; GAP , University of Geneva , 24 Quai Ernest-Ansermet , CH-1211 Geneva , Switzerland.
Berger H; DQMP , University of Geneva , 24 Quai Ernest-Ansermet , CH-1211 Geneva , Switzerland.
Giamarchi T; Institut de Physique de la Matière Complexe , École Polytechnique Fédérale de Lausanne , CH-1015 Lausanne , Switzerland.
Morpurgo AF; DQMP , University of Geneva , 24 Quai Ernest-Ansermet , CH-1211 Geneva , Switzerland.

Nano Lett ; 19(12): 8836-8845, 2019 12 11.

Article em En | MEDLINE | ID: mdl-31670964