Controlled high-quality interface of a Ti<sub>2.5</sub>O<sub>3</sub>(0â¯1â¯0)/GaAs(0â¯0â¯1) heterostructure enabled by minimized lattice mismatch and suppressed ion diffusion.

Zhou, Yunxia; Liu, Xingpeng; Zhu, Jun

Controlled high-quality interface of a Ti_2.5O₃(0â¯1â¯0)/GaAs(0â¯0â¯1) heterostructure enabled by minimized lattice mismatch and suppressed ion diffusion.

Zhou, Yunxia; Liu, Xingpeng; Zhu, Jun.

Afiliação

Zhou Y; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China.
Liu X; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China.
Zhu J; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China. Electronic address: junzhu@uestc.edu.cn.

J Colloid Interface Sci ; 560: 769-776, 2020 Feb 15.

Article em En | MEDLINE | ID: mdl-31706653