Amorphous Mixture of Two Indium-Free BaSnO<sub>3</sub> and ZnSnO<sub>3</sub> for Thin-Film Transistors with Balanced Performance and Stability.

Amorphous Mixture of Two Indium-Free BaSnO₃ and ZnSnO₃ for Thin-Film Transistors with Balanced Performance and Stability.

Nahm, Ho-Hyun; Kim, Hyoung-Do; Park, Ji-Min; Kim, Hyun-Suk; Kim, Yong-Hyun.

Afiliação

Nahm HH; Graduate School of Nanoscience and Technology and Department of Physics , Korea Advanced Institute of Science and Technology , Daejeon 34141 , Republic of Korea.
Kim HD; Department of Materials Science and Engineering , Chungnam National University , Daejeon 34134 , Republic of Korea.
Park JM; Department of Materials Science and Engineering , Chungnam National University , Daejeon 34134 , Republic of Korea.
Kim HS; Department of Materials Science and Engineering , Chungnam National University , Daejeon 34134 , Republic of Korea.
Kim YH; Graduate School of Nanoscience and Technology and Department of Physics , Korea Advanced Institute of Science and Technology , Daejeon 34141 , Republic of Korea.

ACS Appl Mater Interfaces ; 12(3): 3719-3726, 2020 Jan 22.

Article em En | MEDLINE | ID: mdl-31889442