III-V Clathrate Semiconductors with Outstanding Hole Mobility: Cs8In27Sb19 and A8Ga27Sb19 (A = Cs, Rb).

III-V Clathrate Semiconductors with Outstanding Hole Mobility: Cs₈In₂₇Sb₁₉ and A₈Ga₂₇Sb₁₉ (A = Cs, Rb).

Owens-Baird, Bryan; Wang, Jian; Wang, Suyin Grass; Chen, Yu-Sheng; Lee, Shannon; Donadio, Davide; Kovnir, Kirill.

Afiliação

Owens-Baird B; Department of Chemistry , Iowa State University , Ames , Iowa 50011 , United States.
Wang J; Ames Laboratory , U.S. Department of Energy , Ames , Iowa 50011 , United States.
Wang SG; Department of Chemistry , Iowa State University , Ames , Iowa 50011 , United States.
Chen YS; Ames Laboratory , U.S. Department of Energy , Ames , Iowa 50011 , United States.
Lee S; Department of Chemistry , Wichita State University , Wichita , Kansas 67260 , United States.
Donadio D; NSF's ChemMatCARS, Center for Advanced Radiation Sources, Argonne National Laboratory , The University of Chicago , Lemont , Illinois 60439 , United States.
Kovnir K; NSF's ChemMatCARS, Center for Advanced Radiation Sources, Argonne National Laboratory , The University of Chicago , Lemont , Illinois 60439 , United States.

J Am Chem Soc ; 142(4): 2031-2041, 2020 Jan 29.

Article em En | MEDLINE | ID: mdl-31894979

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article