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Reorientation of π-conjugated molecules on few-layer MoS2 films.
Hagara, Jakub; Mrkyvkova, Nada; NádaZdy, Peter; Hodas, Martin; Bodík, Michal; Jergel, Matej; Majková, Eva; Tokár, Kamil; Hutár, Peter; Sojková, Michaela; Chumakov, Andrei; Konovalov, Oleg; Pandit, Pallavi; Roth, Stephan; Hinderhofer, Alexander; Hulman, Martin; Siffalovic, Peter; Schreiber, Frank.
Afiliação
  • Hagara J; Institute of Physics, Slovak Academy of Sciences, Dúbravská Cesta 9, 845 11 Bratislava, Slovakia. nada.mrkyvkova@savba.sk.
  • Mrkyvkova N; Institute of Physics, Slovak Academy of Sciences, Dúbravská Cesta 9, 845 11 Bratislava, Slovakia. nada.mrkyvkova@savba.sk and Center for Advanced Materials Application, Slovak Academy of Sciences, Dúbravská Cesta 9, Bratislava 84511, Slovakia.
  • NádaZdy P; Institute of Physics, Slovak Academy of Sciences, Dúbravská Cesta 9, 845 11 Bratislava, Slovakia. nada.mrkyvkova@savba.sk.
  • Hodas M; Institute of Applied Physics, University of Tübingen, Auf der Morgenstelle 10, D-72076 Tübingen, Germany.
  • Bodík M; Institute of Physics, Slovak Academy of Sciences, Dúbravská Cesta 9, 845 11 Bratislava, Slovakia. nada.mrkyvkova@savba.sk.
  • Jergel M; Institute of Physics, Slovak Academy of Sciences, Dúbravská Cesta 9, 845 11 Bratislava, Slovakia. nada.mrkyvkova@savba.sk and Center for Advanced Materials Application, Slovak Academy of Sciences, Dúbravská Cesta 9, Bratislava 84511, Slovakia.
  • Majková E; Institute of Physics, Slovak Academy of Sciences, Dúbravská Cesta 9, 845 11 Bratislava, Slovakia. nada.mrkyvkova@savba.sk and Center for Advanced Materials Application, Slovak Academy of Sciences, Dúbravská Cesta 9, Bratislava 84511, Slovakia.
  • Tokár K; Institute of Physics, Slovak Academy of Sciences, Dúbravská Cesta 9, 845 11 Bratislava, Slovakia. nada.mrkyvkova@savba.sk and Advanced Technologies Research Institute, Faculty of Materials Science and Technology in Trnava, Slovak University of Technology in Bratislava, 917 24 Trnava, Slovakia.
  • Hutár P; Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská Cesta 9, 845 11 Bratislava, Slovakia.
  • Sojková M; Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská Cesta 9, 845 11 Bratislava, Slovakia.
  • Chumakov A; European Synchrotron Radiation Facility, 71 Avenue des Martyrs, Grenoble 38000, France.
  • Konovalov O; European Synchrotron Radiation Facility, 71 Avenue des Martyrs, Grenoble 38000, France.
  • Pandit P; Photon Science, Deutsches Elektronen-Synchrotron (DESY), Hamburg 22607, Germany.
  • Roth S; Photon Science, Deutsches Elektronen-Synchrotron (DESY), Hamburg 22607, Germany.
  • Hinderhofer A; Institute of Applied Physics, University of Tübingen, Auf der Morgenstelle 10, D-72076 Tübingen, Germany.
  • Hulman M; Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská Cesta 9, 845 11 Bratislava, Slovakia.
  • Siffalovic P; Institute of Physics, Slovak Academy of Sciences, Dúbravská Cesta 9, 845 11 Bratislava, Slovakia. nada.mrkyvkova@savba.sk and Center for Advanced Materials Application, Slovak Academy of Sciences, Dúbravská Cesta 9, Bratislava 84511, Slovakia.
  • Schreiber F; Institute of Applied Physics, University of Tübingen, Auf der Morgenstelle 10, D-72076 Tübingen, Germany.
Phys Chem Chem Phys ; 22(5): 3097-3104, 2020 Feb 07.
Article em En | MEDLINE | ID: mdl-31967129
ABSTRACT
Small π-conjugated organic molecules have attracted substantial attention in the past decade as they are considered as candidates for future organic-based (opto-)electronic applications. The molecular arrangement in the organic layer is one of the crucial parameters that determine the efficiency of a given device. The desired orientation of the molecules is achieved by a proper choice of the underlying substrate and growth conditions. Typically, one underlying material supports only one inherent molecular orientation at its interface. Here, we report on two different orientations of diindenoperylene (DIP) molecules on the same underlayer, i.e. on a few-layer MoS2 substrate. We show that DIP molecules adopt a lying-down orientation when deposited on few-layer MoS2 with horizontally oriented layers. In contrast, for vertically aligned MoS2 layers, DIP molecules are arranged in a standing-up manner. Employing in situ and real-time grazing-incidence wide-angle X-ray scattering (GIWAXS), we monitored the stress evolution within the thin DIP layer from the early stages of the growth, revealing different substrate-induced phases for the two molecular orientations. Our study opens up new possibilities for the next-generation of flexible electronics, which might benefit from the combination of MoS2 layers with unique optical and electronic properties and an extensive reservoir of small organic molecules.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article