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Reliable resistive switching of epitaxial single crystalline cubic Y-HfO2 RRAMs with Si as bottom electrodes.
Wang, Yankun; Niu, Gang; Wang, Qiang; Roy, Sourav; Dai, Liyan; Wu, Heping; Sun, Yanxiao; Song, Sannian; Song, Zhitang; Xie, Ya-Hong; Ye, Zuo-Guang; Meng, Xiangjian; Ren, Wei.
Afiliação
  • Wang Y; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, School of Electronic Science and Engineering, Xi'an, People's Republic of China.
Nanotechnology ; 31(20): 205203, 2020 May 15.
Article em En | MEDLINE | ID: mdl-32018237
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article