Inverted Si:PbS Colloidal Quantum Dot Heterojunction-Based Infrared Photodetector.
ACS Appl Mater Interfaces
; 12(13): 15414-15421, 2020 Apr 01.
Article
em En
| MEDLINE
| ID: mdl-32159327
ABSTRACT
Silicon and PbS colloidal quantum dot heterojunction photodetectors combine the advantages of the Si device and PbS CQDs, presenting a promising strategy for infrared light detecting. However, the construction of a high-quality CQDsSi heterojunction remains a challenge. In this work, we introduce an inverted structure photodetector based on n-type Si and p-type PbS CQDs. Compared with the existing normal structure photodetector with p-type Si and n-type PbS CQDs, it has a lower energy band offset that provides more efficient charge extraction for the device. With the help of Si wafer surface passivation and the Si doping density optimization, the device delivers a high detectivity of 1.47 × 1011 Jones at 1540 nm without working bias, achieving the best performance in Si/PbS photodetectors in this region now. This work provides a new strategy to fabricate low-cost high-performance PbS CQDs photodetectors compatible with silicon arrays.
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MEDLINE
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En
Ano de publicação:
2020
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Article