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Defect-Enhanced Polarization Switching in the Improper Ferroelectric LuFeO3.
Barrozo, Petrucio; Småbråten, Didrik René; Tang, Yun-Long; Prasad, Bhagwati; Saremi, Sahar; Ozgur, Rustem; Thakare, Vishal; Steinhardt, Rachel A; Holtz, Megan E; Stoica, Vladimir Alexandru; Martin, Lane W; Schlom, Darrel G; Selbach, Sverre Magnus; Ramesh, Ramamoorthy.
Afiliação
  • Barrozo P; Physics Department, Federal University of Sergipe, São Cristóvão, Sergipe, 49100-000, Brazil.
  • Småbråten DR; Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA.
  • Tang YL; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Prasad B; Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology, Norway.
  • Saremi S; Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA.
  • Ozgur R; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Thakare V; Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA.
  • Steinhardt RA; Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA.
  • Holtz ME; Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA.
  • Stoica VA; Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA.
  • Martin LW; Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 15805, USA.
  • Schlom DG; Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 15805, USA.
  • Selbach SM; Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA.
  • Ramesh R; Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA, 94720, USA.
Adv Mater ; 32(23): e2000508, 2020 Jun.
Article em En | MEDLINE | ID: mdl-32346899
ABSTRACT
Results of switching behavior of the improper ferroelectric LuFeO3 are presented. Using a model set of films prepared under controlled chemical and growth-rate conditions, it is shown that defects can reduce the quasi-static switching voltage by up to 40% in qualitative agreement with first-principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO3 . It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article
Texto completo
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XML
PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article