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Electron-Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy.
Jiang, Yuxuan; Asmar, Mahmoud M; Han, Xingyue; Ozerov, Mykhaylo; Smirnov, Dmitry; Salehi, Maryam; Oh, Seongshik; Jiang, Zhigang; Tse, Wang-Kong; Wu, Liang.
Afiliação
  • Jiang Y; National High Magnetic Field Laboratory, Tallahassee, Florida 32310, United States.
  • Asmar MM; Department of Physics and Astronomy, The University of Alabama, Tuscaloosa, Alabama 35487, United States.
  • Han X; Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
  • Ozerov M; National High Magnetic Field Laboratory, Tallahassee, Florida 32310, United States.
  • Smirnov D; National High Magnetic Field Laboratory, Tallahassee, Florida 32310, United States.
  • Salehi M; Department of Material Science and Engineering, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, United States.
  • Oh S; Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, United States.
  • Jiang Z; School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
  • Tse WK; Department of Physics and Astronomy, The University of Alabama, Tuscaloosa, Alabama 35487, United States.
  • Wu L; Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
Nano Lett ; 20(6): 4588-4593, 2020 Jun 10.
Article em En | MEDLINE | ID: mdl-32402200
ABSTRACT
When surface states (SSs) form in topological insulators (TIs), they inherit the properties of bulk bands, including the electron-hole (e-h) asymmetry but with much more profound impacts. Here via combining magneto-infrared spectroscopy with theoretical analysis, we show that e-h asymmetry significantly modifies the SS electronic structures when interplaying with the quantum confinement effect. Compared with the case without e-h asymmetry, the SSs now bear not only a band asymmetry, such as that in the bulk, but also a shift of the Dirac point relative to the bulk bands and a reduction of the hybridization gap of up to 70%. Our results signify the importance of e-h asymmetry in the band engineering of TIs in the thin-film limit.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article