2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the <i>Ab Initio</i> Microscope.

2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope.

Klinkert, Cedric; Szabó, Áron; Stieger, Christian; Campi, Davide; Marzari, Nicola; Luisier, Mathieu.

Afiliação

Klinkert C; Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland.
Szabó Á; Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland.
Stieger C; Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland.
Campi D; Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
Marzari N; Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
Luisier M; Integrated System Laboratory, ETH Zurich, CH-8092 Zurich, Switzerland.

ACS Nano ; 14(7): 8605-8615, 2020 Jul 28.

Article em En | MEDLINE | ID: mdl-32530608