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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon.
Yako, Motoki; Ishikawa, Yasuhiko; Abe, Eiji; Wada, Kazumi.
Afiliação
  • Yako M; Department of Materials Engineering, The University of Tokyo.
  • Ishikawa Y; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology.
  • Abe E; Department of Materials Engineering, The University of Tokyo.
  • Wada K; Department of Materials Engineering, The University of Tokyo; Department of Materials Science and Engineering, Massachusetts Institute of Technology; kwada@mit.edu.
J Vis Exp ; (161)2020 07 17.
Article em En | MEDLINE | ID: mdl-32744522
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Texto completo: 1 Base de dados: MEDLINE Assunto principal: Silício / Germânio Idioma: En Ano de publicação: 2020 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Silício / Germânio Idioma: En Ano de publicação: 2020 Tipo de documento: Article