Your browser doesn't support javascript.
loading
Two-Dimensional Antiferroelectricity in Nanostripe-Ordered In_{2}Se_{3}.
Xu, Chao; Chen, Yancong; Cai, Xiangbin; Meingast, Arno; Guo, Xuyun; Wang, Fakun; Lin, Ziyuan; Lo, Tsz Wing; Maunders, Christian; Lazar, Sorin; Wang, Ning; Lei, Dangyuan; Chai, Yang; Zhai, Tianyou; Luo, Xin; Zhu, Ye.
Afiliação
  • Xu C; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China.
  • Chen Y; State Key Laboratory of Optoelectronic Materials and Technologies, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China.
  • Cai X; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Meingast A; Thermo Fisher Scientific, Achtseweg Noord 5, 5651 GG Eindhoven, The Netherlands.
  • Guo X; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China.
  • Wang F; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Lin Z; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China.
  • Lo TW; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China.
  • Maunders C; Thermo Fisher Scientific, Achtseweg Noord 5, 5651 GG Eindhoven, The Netherlands.
  • Lazar S; Thermo Fisher Scientific, Achtseweg Noord 5, 5651 GG Eindhoven, The Netherlands.
  • Wang N; Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Lei D; Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, China.
  • Chai Y; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China.
  • Zhai T; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Luo X; State Key Laboratory of Optoelectronic Materials and Technologies, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China.
  • Zhu Y; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China.
Phys Rev Lett ; 125(4): 047601, 2020 Jul 24.
Article em En | MEDLINE | ID: mdl-32794817
Two-dimensional (2D) layered materials have been an exciting frontier for exploring emerging physics at reduced dimensionality, with a variety of exotic properties demonstrated at 2D limit. Here, we report the first experimental discovery of in-plane antiferroelectricity in a 2D material ß^{'}-In_{2}Se_{3}, using optical and electron microscopy consolidated by first-principles calculations. Different from conventional 3D antiferroelectricity, antiferroelectricity in ß^{'}-In_{2}Se_{3} is confined within the 2D layer and generates the unusual nanostripe ordering: the individual nanostripes exhibit local ferroelectric polarization, whereas the neighboring nanostripes are antipolar with zero net polarization. Such a unique superstructure is underpinned by the intriguing competition between 2D ferroelectric and antiferroelectric ordering in ß^{'}-In_{2}Se_{3}, which can be preserved down to single-layer thickness as predicted by calculation. Besides demonstrating 2D antiferroelectricity, our finding further resolves the true nature of the ß^{'}-In_{2}Se_{3} superstructure that has been under debate for over four decades.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article