Your browser doesn't support javascript.
loading
Micro-Heterogeneous Annihilation Dynamics of Self-Trapped Excitons in Hematite Single Crystals.
Liao, Hongyan; Fan, Yunyan; Lin, Yumei; Wang, Kang; Li, Renfu; Chen, Xueyuan; Zhang, Kelvin H L; Yang, Ye.
Afiliação
  • Liao H; State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
  • Fan Y; State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
  • Lin Y; State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
  • Wang K; State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
  • Li R; CAS Key Laboratory of Design and Assembly of Functional Nanostructures and Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China.
  • Chen X; CAS Key Laboratory of Design and Assembly of Functional Nanostructures and Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China.
  • Zhang KHL; State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
  • Yang Y; State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.
J Phys Chem Lett ; 11(18): 7867-7873, 2020 Sep 17.
Article em En | MEDLINE | ID: mdl-32864976
The Auger recombination in bulk semiconductors can quickly depopulate the charge carriers in a nonradiative way, which, fortunately, only has a detrimental impact on optoelectronic device performance under the condition of high carrier density because the restriction arising from concurrent momentum and energy conservation limits the Auger rate. Here, we surprisingly observed enhanced Auger recombination in an α-Fe2O3 single crystal, a wide bandgap semiconductor with low carrier mobility. The Auger process was ascribed to the Coulombically coupled self-trapped excitons (STEs), and the relaxation of momentum conservation due to the strong spatial localization of these STEs should account for the enhancement. The STE-density dependent kinetics suggested that the strong polaronic effect could cause a micro-heterogeneous distribution of STEs in a high-quality bulk single crystal, which also gave rise to the micro-heterogeneous annihilation dynamics, and a stochastic recombination model was developed and successfully described the STE annihilation dynamics.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article