Positronium formation at 4H SiC(0001) surfaces.

Kawasuso, A; Wada, K; Miyashita, A; Maekawa, M; Iwamori, H; Iida, S; Nagashima, Y.

Afiliação

Kawasuso A; National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan.
Wada K; National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan.
Miyashita A; National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan.
Maekawa M; National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan.
Iwamori H; Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan.
Iida S; Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan.
Nagashima Y; Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan.

J Phys Condens Matter ; 33(3)2020 Oct 20.

Article em En | MEDLINE | ID: mdl-33017809