A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector.

Devkota, Shisir; Parakh, Mehul; Johnson, Sean; Ramaswamy, Priyanka; Lowe, Michael; Penn, Aubrey; Reynolds, Lew; Iyer, Shanthi.

Afiliação

Devkota S; Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America.
Parakh M; Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America.
Johnson S; Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411, United States of America.
Ramaswamy P; Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411, United States of America.
Lowe M; Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411, United States of America.
Penn A; Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, United States of America.
Reynolds L; Analytical Instrumentation Facility, North Carolina State University, Raleigh, NC 27695, United States of America.
Iyer S; Analytical Instrumentation Facility, North Carolina State University, Raleigh, NC 27695, United States of America.

Nanotechnology ; 31(50): 505203, 2020 Dec 11.

Article em En | MEDLINE | ID: mdl-33021209

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article