Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation Layer.

Zheng, Li; He, Wei; Spampinato, Valentina; Franquet, Alexis; Sergeant, Stefanie; Gendt, Stefan De; Armini, Silvia.

Afiliação

Zheng L; Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven, Belgium.
He W; School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China.
Spampinato V; School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China.
Franquet A; Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven, Belgium.
Sergeant S; Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven, Belgium.
Gendt S; Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven, Belgium.
Armini S; Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven, Belgium.

Langmuir ; 36(44): 13144-13154, 2020 Nov 10.

Article em En | MEDLINE | ID: mdl-33104359

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article