Structural, electronic, and optical properties of the gallium nitride semiconductor by means of the FP-LAPW method.

Gasmi, F Z; Chemam, R; Graine, R; Boubir, B; Meradji, H.

Afiliação

Gasmi FZ; Radiation Physics Laboratory, Department of Physics, Faculty of Sciences, Badji Mokhtar University, Sidi Amar, Annaba, Algeria.
Chemam R; Research Center in Industrial Technologies, CRTI, Cheraga, P.O. Box 64, 16014, Algiers, Algeria.
Graine R; Radiation Physics Laboratory, Department of Physics, Faculty of Sciences, Badji Mokhtar University, Sidi Amar, Annaba, Algeria.
Boubir B; Radiation Physics Laboratory, Department of Physics, Faculty of Sciences, Badji Mokhtar University, Sidi Amar, Annaba, Algeria. r.graine@crti.dz.
Meradji H; Research Center in Industrial Technologies, CRTI, Cheraga, P.O. Box 64, 16014, Algiers, Algeria. r.graine@crti.dz.

J Mol Model ; 26(12): 356, 2020 Nov 27.

Article em En | MEDLINE | ID: mdl-33245412