Progress in Epitaxial Thin-Film Na<sub>3</sub> Bi as a Topological Electronic Material.

Di Bernardo, Iolanda; Hellerstedt, Jack; Liu, Chang; Akhgar, Golrokh; Wu, Weikang; Yang, Shengyuan A; Culcer, Dimitrie; Mo, Sung-Kwan; Adam, Shaffique; Edmonds, Mark T; Fuhrer, Michael S

Progress in Epitaxial Thin-Film Na₃ Bi as a Topological Electronic Material.

Di Bernardo, Iolanda; Hellerstedt, Jack; Liu, Chang; Akhgar, Golrokh; Wu, Weikang; Yang, Shengyuan A; Culcer, Dimitrie; Mo, Sung-Kwan; Adam, Shaffique; Edmonds, Mark T; Fuhrer, Michael S.

Afiliação

Di Bernardo I; Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, Victoria, 3800, Australia.
Hellerstedt J; School of Physics and Astronomy, Monash University, Clayton, Victoria, 3800, Australia.
Liu C; School of Physics and Astronomy, Monash University, Clayton, Victoria, 3800, Australia.
Akhgar G; Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, Victoria, 3800, Australia.
Wu W; School of Physics and Astronomy, Monash University, Clayton, Victoria, 3800, Australia.
Yang SA; Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, Victoria, 3800, Australia.
Culcer D; School of Physics and Astronomy, Monash University, Clayton, Victoria, 3800, Australia.
Mo SK; Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore.
Adam S; Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore.
Edmonds MT; Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, New South Wales, 2052, Australia.
Fuhrer MS; School of Physics, University of New South Wales, Sydney, New South Wales, 2052, Australia.