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A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current.
Tang, Zhaowu; Liu, Chunsen; Huang, Xiaohe; Zeng, Senfeng; Liu, Liwei; Li, Jiayi; Jiang, Yu-Gang; Zhang, David Wei; Zhou, Peng.
Afiliação
  • Tang Z; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Liu C; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Huang X; School of Computer Science, Fudan University, Shanghai 200433, China.
  • Zeng S; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Liu L; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Li J; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Jiang YG; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Zhang DW; School of Computer Science, Fudan University, Shanghai 200433, China.
  • Zhou P; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
Nano Lett ; 21(4): 1758-1764, 2021 Feb 24.
Article em En | MEDLINE | ID: mdl-33565310

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article