GeSn lateral p-i-n waveguide photodetectors for mid-infrared integrated photonics.
Opt Lett
; 46(4): 864-867, 2021 Feb 15.
Article
em En
| MEDLINE
| ID: mdl-33577533
ABSTRACT
In this Letter, we demonstrate mid-infrared (MIR) lateral p-i-n GeSn waveguide photodetectors (WGPDs) on silicon, to the best of our knowledge for the first time, as a key enabler of MIR electronic-photonic integrated circuits (EPICs). Narrow-bandgap GeSn alloys were employed as the active material to enable efficient photodetection in the MIR region. A lateral p-i-n homojunction diode was designed and fabricated to significantly enhance the optical confinement factor of the guided modes and thus enhance the optical responsivity. Thus, a photodetection range of up to 1950 nm and a good responsivity of 0.292 A/W at 1800 nm were achieved. These results demonstrate the feasibility of planar GeSn WGPDs for monolithic MIR EPICs on silicon.
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MEDLINE
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Ano de publicação:
2021
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Article