Resonant Tunneling Due to van der Waals Quantum-Well States of Few-Layer WSe2 in WSe2/h-BN/p+-MoS2 Junction.

Resonant Tunneling Due to van der Waals Quantum-Well States of Few-Layer WSe₂ in WSe₂/h-BN/p⁺-MoS₂ Junction.

Takeyama, Kei; Moriya, Rai; Okazaki, Shota; Zhang, Yijin; Masubuchi, Satoru; Watanabe, Kenji; Taniguchi, Takashi; Sasagawa, Takao; Machida, Tomoki.

Afiliação

Takeyama K; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan.
Moriya R; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan.
Okazaki S; Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama, Kanagawa 226-8503, Japan.
Zhang Y; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan.
Masubuchi S; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan.
Watanabe K; Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
Taniguchi T; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan.
Sasagawa T; International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
Machida T; Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama, Kanagawa 226-8503, Japan.