Your browser doesn't support javascript.
loading
Accidental Impurities in Epitaxial Pb(Zr0.2Ti0.8)O3 Thin Films Grown by Pulsed Laser Deposition and Their Impact on the Macroscopic Electric Properties.
Boni, Georgia Andra; Chirila, Cristina Florentina; Stancu, Viorica; Amarande, Luminita; Pasuk, Iuliana; Trupina, Lucian; Istrate, Cosmin Marian; Radu, Cristian; Tomulescu, Andrei; Neatu, Stefan; Pintilie, Ioana; Pintilie, Lucian.
Afiliação
  • Boni GA; National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania.
  • Chirila CF; National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania.
  • Stancu V; National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania.
  • Amarande L; National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania.
  • Pasuk I; National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania.
  • Trupina L; National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania.
  • Istrate CM; National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania.
  • Radu C; National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania.
  • Tomulescu A; National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania.
  • Neatu S; National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania.
  • Pintilie I; National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania.
  • Pintilie L; National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania.
Nanomaterials (Basel) ; 11(5)2021 Apr 29.
Article em En | MEDLINE | ID: mdl-33947129
Structural and electrical properties of epitaxial Pb(Zr0.2Ti0.8)O3 films grown by pulsed laser deposition from targets with different purities are investigated in this study. One target was produced in-house by using high purity precursor oxides (at least 99.99%), and the other target was a commercial product (99.9% purity). It was found that the out-of-plane lattice constant is about 0.15% larger and the a domains amount is lower for the film grown from the commercial target. The polarization value is slightly lower, the dielectric constant is larger, and the height of the potential barrier at the electrode interfaces is larger for the film deposited from the pure target. The differences are attributed to the accidental impurities, with a larger amount in the commercial target as revealed by composition analysis using inductive coupling plasma-mass spectrometry. The heterovalent impurities can act as donors or acceptors, modifying the electronic characteristics. Thus, mastering impurities is a prerequisite for obtaining reliable and reproducible properties and advancing towards all ferroelectric devices.
Palavras-chave

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article