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Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient.
Zheng, Zhenyi; Zhang, Yue; Lopez-Dominguez, Victor; Sánchez-Tejerina, Luis; Shi, Jiacheng; Feng, Xueqiang; Chen, Lei; Wang, Zilu; Zhang, Zhizhong; Zhang, Kun; Hong, Bin; Xu, Yong; Zhang, Youguang; Carpentieri, Mario; Fert, Albert; Finocchio, Giovanni; Zhao, Weisheng; Khalili Amiri, Pedram.
Afiliação
  • Zheng Z; Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, PR China.
  • Zhang Y; Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA.
  • Lopez-Dominguez V; School of Electronics and Information Engineering, Beihang University, Beijing, PR China.
  • Sánchez-Tejerina L; Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, PR China. yz@buaa.edu.cn.
  • Shi J; Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA.
  • Feng X; Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences, University of Messina, Messina, Italy.
  • Chen L; Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA.
  • Wang Z; Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, PR China.
  • Zhang Z; Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, PR China.
  • Zhang K; Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, PR China.
  • Hong B; Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, PR China.
  • Xu Y; Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, PR China.
  • Zhang Y; Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, PR China.
  • Carpentieri M; Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, PR China.
  • Fert A; School of Electronics and Information Engineering, Beihang University, Beijing, PR China.
  • Finocchio G; Dipartimento di Ingegneria Elettrica e dell'Informazione, Politecnico di Bari, Bari, Italy.
  • Zhao W; Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing, PR China.
  • Khalili Amiri P; Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay, Palaiseau, France.
Nat Commun ; 12(1): 4555, 2021 Jul 27.
Article em En | MEDLINE | ID: mdl-34315883
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii-Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article