Ambipolar Channel p-TMD/n-Ga<sub>2</sub> O<sub>3</sub> Junction Field Effect Transistors and High Speed Photo-sensing in TMD Channel.

Ambipolar Channel p-TMD/n-Ga₂ O₃ Junction Field Effect Transistors and High Speed Photo-sensing in TMD Channel.

Choi, Wonjun; Ahn, Jongtae; Kim, Ki-Tae; Jin, Hye-Jin; Hong, Sungjae; Hwang, Do Kyung; Im, Seongil.

Afiliação

Choi W; Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea.
Ahn J; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), 85, Hoegi-ro, Dongdaemun-gu, Seoul, 02792, Republic of Korea.
Kim KT; Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea.
Jin HJ; Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea.
Hong S; Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea.
Hwang DK; Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), 85, Hoegi-ro, Dongdaemun-gu, Seoul, 02792, Republic of Korea.
Im S; Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea.

Adv Mater ; 33(38): e2103079, 2021 Sep.

Article em En | MEDLINE | ID: mdl-34338384