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Effect of Growth Temperature on the Characteristics of CsPbI3-Quantum Dots Doped Perovskite Film.
Lien, Shui-Yang; Chen, Yu-Hao; Chen, Wen-Ray; Liu, Chuan-Hsi; Huang, Chien-Jung.
Afiliação
  • Lien SY; School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
  • Chen YH; Department of Materials Science and Engineering, Da-Yeh University, Dacun, Changhua 51591, Taiwan.
  • Chen WR; Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China.
  • Liu CH; Department of Applied Physics, National University of Kaohsiung, Kaohsiung University Rd., Kaohsiung 81148, Taiwan.
  • Huang CJ; Department of Electronic Engineering, National Formosa University, Wenhua Rd., Yunlin County 632301, Taiwan.
Molecules ; 26(15)2021 Jul 23.
Article em En | MEDLINE | ID: mdl-34361592
In this study, adding CsPbI3 quantum dots to organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI3 quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article