Your browser doesn't support javascript.
loading
Transverse barrier formation by electrical triggering of a metal-to-insulator transition.
Salev, Pavel; Fratino, Lorenzo; Sasaki, Dayne; Berkoun, Rani; Del Valle, Javier; Kalcheim, Yoav; Takamura, Yayoi; Rozenberg, Marcelo; Schuller, Ivan K.
Afiliação
  • Salev P; Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, USA. psalev@ucsd.edu.
  • Fratino L; Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France.
  • Sasaki D; Department of Materials Science and Engineering, University of California Davis, Davis, CA, USA.
  • Berkoun R; Université Paris-Saclay, CNRS Laboratoire de Physique des Solides, 91405, Orsay, France.
  • Del Valle J; Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, USA.
  • Kalcheim Y; Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.
  • Takamura Y; Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, USA.
  • Rozenberg M; Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa, Israel.
  • Schuller IK; Department of Materials Science and Engineering, University of California Davis, Davis, CA, USA.
Nat Commun ; 12(1): 5499, 2021 Sep 17.
Article em En | MEDLINE | ID: mdl-34535660
ABSTRACT
Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of a conducting filament parallel to the current flow, is a highly active research topic. Using the magneto-optical Kerr imaging, we found that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern the formation of an insulating barrier perpendicular to the driving current. This barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. We further demonstrate that electrically inducing a transverse barrier enables a unique approach to voltage-controlled magnetism. By triggering the metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism is achieved using a global voltage bias applied to the whole device.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article