Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization.

Bezshlyakh, Daria D; Spende, Hendrik; Weimann, Thomas; Hinze, Peter; Bornemann, Steffen; Gülink, Jan; Canals, Joan; Prades, Joan Daniel; Dieguez, Angel; Waag, Andreas

Bezshlyakh, Daria D; Spende, Hendrik; Weimann, Thomas; Hinze, Peter; Bornemann, Steffen; Gülink, Jan; Canals, Joan; Prades, Joan Daniel; Dieguez, Angel; Waag, Andreas.

Afiliação

Bezshlyakh DD; Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany.
Spende H; Laboratory for Emerging Nanometrology, Langer Kamp 6 a/b, 38106 Braunschweig, Germany.
Weimann T; Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany.
Hinze P; Laboratory for Emerging Nanometrology, Langer Kamp 6 a/b, 38106 Braunschweig, Germany.
Bornemann S; Epitaxy Competence Center ec2, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany.
Gülink J; Nanostructuring and Clean Room Center Infrastructure, Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany.
Canals J; Nanostructuring and Clean Room Center Infrastructure, Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany.
Prades JD; Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany.
Dieguez A; Laboratory for Emerging Nanometrology, Langer Kamp 6 a/b, 38106 Braunschweig, Germany.
Waag A; Epitaxy Competence Center ec2, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany.