Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction.

Lim, Jung Wook; Heo, Su Jae; Park, Min A; Kim, Jieun.

Afiliação

Lim JW; Information & Communications Core Technology Creative Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Daejeon 305-700, Korea.
Heo SJ; Department of Advanced Device Engineering, University of Science and Technology (UST), 217 Gajeong-ro, Daejeon 305-350, Korea.
Park MA; Information & Communications Core Technology Creative Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Daejeon 305-700, Korea.
Kim J; Department of Advanced Device Engineering, University of Science and Technology (UST), 217 Gajeong-ro, Daejeon 305-350, Korea.

Materials (Basel) ; 14(24)2021 Dec 07.

Article em En | MEDLINE | ID: mdl-34947105